SPW47N60C3 Infineon CoolMOS™ N-Channel Power MOSFET 650V 47A 70mΩ TO-247AC-3

SPW47N60C3 Product Overview

The SPW47N60C3 is an N‑channel enhancement‑mode power MOSFET from Infineon Technologies, part of the renowned CoolMOS™ C3 series. SPW47N60C3 Leveraging advanced CoolMOS™ high‑voltage superjunction technology, it achieves extremely low on‑state resistance and ultra‑low gate charge in a TO-247AC-3 package, significantly reducing conduction, switching, and driving losses for higher power density and efficiency. SPW47N60C3  With a 650V drain‑source voltage, 47A continuous drain current, and 415W maximum power dissipation, it is widely used in server power supplies, telecom equipment, motor drives, solar inverters, electric vehicles, UPS, and industrial automation.

SPW47N60C3 Core Features

The SPW47N60C3 is an N‑channel enhancement‑mode MOSFET in a through‑hole TO-247AC-3 package. SPW47N60C3 features a 650V drain‑source voltage (Vdss) and a 47A continuous drain current (Id) at 25°C. SPW47N60C3 maximum on‑state resistance (RDS(on)) is only 70mΩ (@ 30A, 10V), with a maximum gate threshold voltage (Vgs(th)) of 3.9V. The device has a gate charge (Qg) between 252nC and 320nC and an input capacitance (Ciss) of 6800pF. Its maximum power dissipation (Pd) is 415W.

SPW47N60C3 Applications

The SPW47N60C3 is well‑suited for demanding applications, including switched‑mode power supplies, server and telecom power supplies, adapters, UPS, motor control and drives, solar inverters, electric vehicles, industrial automation, and induction heating.

SPW47N60C3 Key Advantages

The SPW47N60C3 leverages revolutionary CoolMOS™ technology to deliver industry‑leading on‑state resistance in a TO‑247 package. Lower RDS(on) reduces conduction losses, while ultra‑low gate charge (Qg) minimizes switching losses and drive requirements. Low effective output capacitance and low Eoss improve light‑load efficiency and overall system performance. High dv/dt capability and repetitive avalanche rating ensure ruggedness and reliability under harsh conditions. Additionally, the device is RoHS compliant with lead‑free plated terminals.

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FAQ

1. What is SPW47N60C3?
SPW47N60C3 is an N-channel enhancement-mode power MOSFET from Infineon, belonging to the CoolMOS™ C3 series. It comes in a TO-247AC-3 package and was launched in 2001. The CoolMOS™ series is known for its revolutionary high-voltage technology, significantly reducing conduction, switching, and driving losses for superior power density and system efficiency.

2. What are the key specifications of SPW47N60C3?
Key specifications include:

• Drain-Source Voltage (VDS) : 650V

• Continuous Drain Current (ID) : 47A (at Tc=25°C)

• On-State Resistance (RDS(on)) : Typ. 0.07Ω (70 mΩ) @ VGS=10V

• Gate Threshold Voltage (VGS(th)) : 2.1V to 3.9V

• Gate Charge (Qg) : 252nC to 320nC @ VGS=10V

• Input Capacitance (Ciss) : 6800pF @ VDS=25V

• Reverse Transfer Capacitance (Crss) : 145pF

• Power Dissipation (Pd) : 415W

• Operating Junction Temperature: -55°C to +150°C

3. What package does SPW47N60C3 use?
It uses the TO-247AC-3 package (TO-247, 3-pin). This is a through-hole mounting device, with supplier device package PG-TO247-3. This package is suitable for high-power applications requiring good heat dissipation and reliable soldering.

4. What applications is SPW47N60C3 suitable for?
This device is widely used in various high-performance power conversion applications:

• Server power supplies, telecom equipment power supplies, and computer power supplies

• Uninterruptible Power Supplies (UPS) and distributed power systems

• Power Factor Correction (PFC) 

• Motor drives and industrial automation

• Solar inverters and renewable energy systems

• Induction heating and high-frequency inverters

5. What development tools support SPW47N60C3?
As a standard power MOSFET, SPW47N60C3 does not require dedicated software development tools. Designers should refer to the datasheet and application notes available on the Infineon website. Infineon also provides CoolMOS™ selection guides and power loss calculation tools to assist with device selection and thermal design.

6. What is the operating temperature range of SPW47N60C3?
The operating junction temperature (TJ) range is -55°C to +150°C. The storage temperature range is typically the same.

7. What are the key features of SPW47N60C3?
Key features include:

• Revolutionary high-voltage CoolMOS™ technology with worldwide best RDS(on) in TO-247

• Ultra-low gate charge (Qg) for reduced driving losses

• Ultra-low effective capacitances for faster switching

• Periodic avalanche rated and extreme dv/dt rated for high reliability

• Low output capacitance energy storage (Eoss) to reduce switching losses

8. What are the alternative models for SPW47N60C3?
This model is obsolete/end-of-life. Alternative options include:

• SPW47N60C3FKSA1: Infineon's direct replacement (with FKSA1 suffix), identical specifications to SPW47N60C3

• VBP165R47S (VBsemi): Domestic alternative with lower on-resistance, offering enhanced performance

• SIHG47N60E-GE3 (Vishay): Functionally similar alternative

• SPW47N60S5: Another Infineon CoolMOS series model

9. What are the design considerations when using SPW47N60C3?
Key design considerations include:

• Gate Drive: VGS must be kept within ±20V. Use sufficient gate drive voltage (typically 10V) for full enhancement and minimum RDS(on)

• Thermal Management: With maximum power dissipation of 415W, an adequate heatsink is essential to keep junction temperature below 150°C

• Switching Losses: With input capacitance of 6800pF and gate charge of ~300nC, high-frequency switching requires sufficient drive capability — low-impedance gate drive circuits are recommended

• Avalanche Capability: With avalanche energy rating (EAS) of 1800 mJ, it is suitable for inductive load switching applications

10. Is SPW47N60C3 environmentally compliant?
This device is RoHS compliant (lead-free). Its US ECCN rating is EAR99. Note that this model is obsolete — for new designs, SPW47N60C3FKSA1 is recommended as the replacement.